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contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency
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10.1063/1.2236104
/content/aip/journal/apl/89/6/10.1063/1.2236104
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2236104
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics of LEDs with the as-deposited and annealed contacts. (b) Transmittance of the as-deposited and annealed contacts in the visible range.

Image of FIG. 2.
FIG. 2.

AES depth profiles of the (a) as-deposited contact and (b) the contact annealed in air. The contact was annealed at for .

Image of FIG. 3.
FIG. 3.

XRD profiles of (a) the as-deposited contact and (b) the annealed contact.

Image of FIG. 4.
FIG. 4.

Cross-sectional HRTEM images of (a) the as-deposited contact and (b) the annealed contact.

Image of FIG. 5.
FIG. 5.

(a) EL and PL spectra of LEDs with a silicon nitride containing Si QDs. (b) Schematic diagram of LEDs with the as-deposited and annealed contacts. , , , and are the tunneling barrier heights, defined as the difference between the work functions of NiSi, Au, NiO, and Ni and the electron affinity of silicon nitride, respectively.

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/content/aip/journal/apl/89/6/10.1063/1.2236104
2006-08-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ni∕Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2236104
10.1063/1.2236104
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