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parameter as a function of positron implantation energy for some of the samples. The measured points have been normalized to the value of GaAs bulk. Also indicated in the figure is the positron mean implantation depth in GaAs. The vertical lines indicate where the positron mean implantation depth coincides with the boundaries of the superlattice structure.
plot for the samples with no nitrogen content normalized to GaAs bulk. The arrow indicates increasing positron implantation energy.
plot for the GaInNAs samples normalized to GaAs bulk. Indicated in the figure are the surface states of the different samples and the known and parameter values of the Ga and As vacancies in GaAs (Refs. 11, 19, and 20).
plot for the GaNAs samples normalized to GaAs bulk.
Summary of the samples used in the study. Two identical pieces of each sample were prepared and one of the pieces was annealed for at .
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