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In situ scanning tunneling microscopy during metal-organic vapor phase epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Rendered image of the STM inside the reactor. The inner line is the size of the liner tube and the outer line is the size of the reactor tube with a diameter of .

Image of FIG. 2.
FIG. 2.

(Color online) GaAs (001) 2° vicinal along [110] with step bunches (left) ex situ prior to growth by a commercial AFM and (right) the same sample at in situ under carrier gas with -BAs. The drift in the lower end of the in situ STM images results from decreasing the temperature.

Image of FIG. 3.
FIG. 3.

(Color online) Quantum dots and clusters images taken in situ at room temperature at . The left images show the surface after growth of InAs at on 2° vicinal GaAs (001) with the tip retracted. The big structure is probably some tungsten oxide/arsenic dropped off during tip preparation. The right image shows the surface at room temperature after depositing InAs at on GaAs (001) while scanning. The tip was only retracted during cooling. The white rectangle marks a dot-free region, likely the scan area during QD growth.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ scanning tunneling microscopy during metal-organic vapor phase epitaxy