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HRXRD rocking curves of the 100-layer QD sample with InGaAs SBLs and the reference samples containing 10- and 30-layer QDs without InGaAs SBL. The peak with the highest intensity at 0° is from the InP substrate.
Cross-sectional TEM micrographs of the 100-layer QD sample. (a) The center 75 QD layers. (b) The top five QD layers. (c) Zoom-in images of QD layers.
Room temperature and photoluminescence spectra of the 100-layer QD sample grown on .
Comparison of room temperature and photoluminescence intensities among QD samples containing various number of QD layers.
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