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Defect-free 100-layer strain-balanced InAs quantum dot structure grown on InP substrate
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10.1063/1.2335605
/content/aip/journal/apl/89/6/10.1063/1.2335605
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335605
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HRXRD rocking curves of the 100-layer QD sample with InGaAs SBLs and the reference samples containing 10- and 30-layer QDs without InGaAs SBL. The peak with the highest intensity at 0° is from the InP substrate.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM micrographs of the 100-layer QD sample. (a) The center 75 QD layers. (b) The top five QD layers. (c) Zoom-in images of QD layers.

Image of FIG. 3.
FIG. 3.

Room temperature and photoluminescence spectra of the 100-layer QD sample grown on .

Image of FIG. 4.
FIG. 4.

Comparison of room temperature and photoluminescence intensities among QD samples containing various number of QD layers.

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/content/aip/journal/apl/89/6/10.1063/1.2335605
2006-08-09
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect-free 100-layer strain-balanced InAs quantum dot structure grown on InP substrate
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335605
10.1063/1.2335605
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