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Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures
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10.1063/1.2335619
/content/aip/journal/apl/89/6/10.1063/1.2335619
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335619

Figures

Image of FIG. 1.
FIG. 1.

Tunneling probability calculated using Eq. (1) with varying electric field for the case of a thick silicon oxide barrier.

Image of FIG. 2.
FIG. 2.

curves which yield the full program/erase window, . (a) Stoichiometric silicon nitride sample; (b) Si-rich silicon nitride sample.

Image of FIG. 3.
FIG. 3.

hysteresis characteristics.

Image of FIG. 4.
FIG. 4.

Retention characteristics of the two samples obtained at .

Image of FIG. 5.
FIG. 5.

Trap density distributions in energy level of the two samples extracted using the retention characteristics given in Fig. 4.

Tables

Generic image for table
Table I.

Process parameters for ONO formation.

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/content/aip/journal/apl/89/6/10.1063/1.2335619
2006-08-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335619
10.1063/1.2335619
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