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Tunneling probability calculated using Eq. (1) with varying electric field for the case of a thick silicon oxide barrier.
curves which yield the full program/erase window, . (a) Stoichiometric silicon nitride sample; (b) Si-rich silicon nitride sample.
Retention characteristics of the two samples obtained at .
Trap density distributions in energy level of the two samples extracted using the retention characteristics given in Fig. 4.
Process parameters for ONO formation.
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