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Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures
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10.1063/1.2335619
/content/aip/journal/apl/89/6/10.1063/1.2335619
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335619
/content/aip/journal/apl/89/6/10.1063/1.2335619
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/content/aip/journal/apl/89/6/10.1063/1.2335619
2006-08-10
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335619
10.1063/1.2335619
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