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Lack of dependence of the Raman frequency of optical vibrational modes on excitation wavelength in polar nanosemiconductors
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10.1063/1.2335622
/content/aip/journal/apl/89/6/10.1063/1.2335622
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335622
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Figures

Image of FIG. 1.
FIG. 1.

High-resolution TEM images of ZnO NPs, GaN NPs, SiC NRs, and CdSe NRs.

Image of FIG. 2.
FIG. 2.

Energy regions of optical transition of ZnO, GaN, SiC, and CdSe determined by PL from this work (light lines) and Refs. 10–17 for bulk (heavy lines) and nanoscale (thick lines)materials.

Image of FIG. 3.
FIG. 3.

(a) Raman spectra excited at various wavelengths; (b) dependence of Raman frequency on excitation wavelength/energy for ZnO NPs, GaN NPs, SiC NRs, and CdSe NRs.

Image of FIG. 4.
FIG. 4.

(a) Observed Raman spectra (solid lines) and calculated Raman spectra by the microcrystal model (dashed lines); (b) reduced Raman spectra (solid lines) and the weighted VDOSs by the amorphous model (dashed lines) for Si nanowires and SiC NRs.

Image of FIG. 5.
FIG. 5.

VDOSs of InSb nanosemiconductors of different sizes calculated by molecular-dynamics method.

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/content/aip/journal/apl/89/6/10.1063/1.2335622
2006-08-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lack of dependence of the Raman frequency of optical vibrational modes on excitation wavelength in polar nanosemiconductors
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335622
10.1063/1.2335622
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