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High-resolution TEM images of ZnO NPs, GaN NPs, SiC NRs, and CdSe NRs.
Energy regions of optical transition of ZnO, GaN, SiC, and CdSe determined by PL from this work (light lines) and Refs. 10–17 for bulk (heavy lines) and nanoscale (thick lines)materials.
(a) Raman spectra excited at various wavelengths; (b) dependence of Raman frequency on excitation wavelength/energy for ZnO NPs, GaN NPs, SiC NRs, and CdSe NRs.
(a) Observed Raman spectra (solid lines) and calculated Raman spectra by the microcrystal model (dashed lines); (b) reduced Raman spectra (solid lines) and the weighted VDOSs by the amorphous model (dashed lines) for Si nanowires and SiC NRs.
VDOSs of InSb nanosemiconductors of different sizes calculated by molecular-dynamics method.
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