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Large area self-assembled masking for photonic applications
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10.1063/1.2335668
/content/aip/journal/apl/89/6/10.1063/1.2335668
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335668
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

FESEM image of the monolayer silica LB film used as the masking layer during ion implantation.

Image of FIG. 2.
FIG. 2.

FESEM images of the -implanted -type sample (a), the -implanted -type sample (b), and the -implanted -type sample (c) after removal of the porous layer. Etching occurred preferably in the implanted regions between the nanospheres, where the ions penetrated the substrate.

Image of FIG. 3.
FIG. 3.

FESEM image of the -implanted -type sample, through a double-layered LB masking film: (a) The honeycomblike pore structure after removal of the porous layer originated from the lateral protrusion of the circular pores during anodization. (b) FESEM image of the -implanted -type sample after removal of the porous layer. It was etched in the nonimplanted regions in the area underneath the nanoparticles, i.e., masked by the nanospheres. (c) Cross-section FESEM image of the -implanted -type sample [see Fig. 2(a)] before removal of the PS layer. On the cleaved cross section two of the crystalline silicon pillars are marked.

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/content/aip/journal/apl/89/6/10.1063/1.2335668
2006-08-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Large area self-assembled masking for photonic applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335668
10.1063/1.2335668
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