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Cu-doped GaN: A dilute magnetic semiconductor from first-principles study
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10.1063/1.2335773
/content/aip/journal/apl/89/6/10.1063/1.2335773
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335773
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Band structure of the majority spin (a) and the minority spin (b) of GaN doped with 6.25% of Cu. Fermi level is set to zero.

Image of FIG. 2.
FIG. 2.

Spin DOSs of (a) and of the N atom on the top (b) and at the basal plane (c)–(e) of the tetrahedron. Fermi level is set to zero. Positive (negative) values correspond to the majority (minority) spin.

Image of FIG. 3.
FIG. 3.

Isosurface of the spin distribution in the tetrahedron. The Cu atom is located at the center. Magnetization of each atom is given in parentheses.

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/content/aip/journal/apl/89/6/10.1063/1.2335773
2006-08-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cu-doped GaN: A dilute magnetic semiconductor from first-principles study
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335773
10.1063/1.2335773
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