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Noise in carbon nanotube field effect transistor
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10.1063/1.2335777
/content/aip/journal/apl/89/6/10.1063/1.2335777
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335777
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Source-drain current noise power spectrum density for the frequency range of at different source-drain biases plotted in double log scale, showing behavior with from 1.05 to 1.2. (b) The is linearly proportional to .

Image of FIG. 2.
FIG. 2.

(Color online) (a) measured after the noise study, showing that the CNT-FET works in the linear region for at the gate bias of interest. (b) The input-referred noise power spectrum density of the CNT-FET measured at room temperature in vacuum with a pressure of at center frequencies of 40 Hz and , respectively. The quadratical increase of the as a function of gate overdrive voltage indicates that noise in CNT-FET is mainly due to mobility fluctuation. The black solid curve is the characteristic of the carbon nanotube. The solid triangle points are the average currents obtained before and after noise measurements at each gate bias. From the current characteristic, the device works in the strong inversion for a gate bias smaller than .

Image of FIG. 3.
FIG. 3.

(Color online) (a) Comparison of characteristics of the carbon nanotube in air and in vacuum. (b) Comparison of characteristics of the carbon nanotube in air and in vacuum.

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/content/aip/journal/apl/89/6/10.1063/1.2335777
2006-08-10
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Noise in carbon nanotube field effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335777
10.1063/1.2335777
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