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Selective growth of Ge islands on nanometer-scale patterned substrate by molecular beam epitaxy
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10.1063/1.2335976
/content/aip/journal/apl/89/6/10.1063/1.2335976
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335976
/content/aip/journal/apl/89/6/10.1063/1.2335976
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/content/aip/journal/apl/89/6/10.1063/1.2335976
2006-08-08
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective growth of Ge islands on nanometer-scale patterned SiO2∕Si substrate by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335976
10.1063/1.2335976
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