1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Selective growth of Ge islands on nanometer-scale patterned substrate by molecular beam epitaxy
Rent:
Rent this article for
USD
10.1063/1.2335976
/content/aip/journal/apl/89/6/10.1063/1.2335976
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335976
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic illustration of the nanopatterning process for forming the self-assembled hexagonal cylindrical patterns of exposed Si areas (holes) in the mask layer using self-assembled diblock copolymer of PS--MMA as the template.

Image of FIG. 2.
FIG. 2.

(a) Plan-view SEM image and cross-sectional TEM image (inset) and (b) plan-view TEM image and diffraction pattern (inset) of Ge islands in Si holes of Ge coverage.

Image of FIG. 3.
FIG. 3.

(a) Plan-view SEM image and (b) plan-view TEM image and diffraction pattern (inset) of Ge islands in Si holes of Ge coverage.

Loading

Article metrics loading...

/content/aip/journal/apl/89/6/10.1063/1.2335976
2006-08-08
2014-04-23
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective growth of Ge islands on nanometer-scale patterned SiO2∕Si substrate by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2335976
10.1063/1.2335976
SEARCH_EXPAND_ITEM