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(a) Schematic diagram of Si HIWIP structure. The doping concentration of the Si emitter is , while the contacts are doped to . The Si barrier is not intentionally doped. The thicknesses of the top contact, emitter, barrier, and bottom contact layers are 0.1, 0.2, 1, and , respectively. (b) Band diagram showing the conduction and valence band profiles of the structure.
(a) NIR response of the detector measured at . The two arrows mark the position of two TO-phonon assisted absorption bands. (b) VLWIR response under different bias values at . The curves at and biases have been multiplied by 10. (c) Spectral response of the detector in both the NIR and VLWIR regions, measured at under bias. The arrows indicate the positions of impurity transitions of boron in Si (A–D), and the absorption due to the optical phonon in Si (E).
(a) Responsivity of the detector at under and biases. The observed responsivity of at at indicates a value of 7.8 for the product of quantum efficiency and gain. (b) Detectivity at at different temperatures under bias.
(a) Dark IV characteristics of the detector at different temperatures. The background photocurrent curve at is also shown. (b) Calculated activation energy (Δ), and corresponding threshold wavelength with bias, based on the Arrhenius model.
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