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Molecular modeling of low- films of carbon-doped silicon oxides for theoretical investigations of the mechanical and dielectric properties
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10.1063/1.2336273
/content/aip/journal/apl/89/6/10.1063/1.2336273
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2336273

Figures

Image of FIG. 1.
FIG. 1.

Chemical structure assumed for the SiOCH film.

Image of FIG. 2.
FIG. 2.

Schematic illustrations for the steps to generate network structures, randomization of Si-unit configurations (a), temporary connections of Si units (b), modifications of Si-unit connections (c), and structure relaxation (d).

Image of FIG. 3.
FIG. 3.

View of model structure 2 [eight unit cells ]. The white and gray atoms represent hydrogen and carbon atoms, respectively, and the black atoms represent silicon or oxygen atoms. Lattice constants are in Å.

Image of FIG. 4.
FIG. 4.

Calculated IR curve for model structure 2 (a) and experimentally observed FTIR spectrum (b). The vertical lines under the IR curve in (a) represent IR intensities of individual normal modes. The IR curve in (a) is obtained by broadening each black line to a Gaussian function with half-value-width of .

Image of FIG. 5.
FIG. 5.

Density dependence of dielectric constant (a) and Young’s modulus (b). Filled circles: calculated data for the PECVD film, open circles: experimental data for the SOD films.

Tables

Generic image for table
Table I.

List of modeled structures. , density; , deviations of Si–O bond lengths (difference between maximum and minimum); , Young’s modulus; and , dielectric constant.

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/content/aip/journal/apl/89/6/10.1063/1.2336273
2006-08-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Molecular modeling of low-k films of carbon-doped silicon oxides for theoretical investigations of the mechanical and dielectric properties
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2336273
10.1063/1.2336273
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