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SEM image of (a) In droplets and (b) InP nanowires at the edge of a Si(111) substrate. The inset shows a close-up image of a droplet and the contact angle. The scale bars correspond to .
SEM image of (a) a Si(111) surface with in situ deposited In droplets, (b) InP nanowires grown on Si(111) with a V/III ratio of 100, (c) V/III ratio of 200, and (d) V/III ratio of 300. The scale bar corresponds to .
(a) TEM image of a linear InP nanowire. The inset shows a close-up of the droplet-nanowire interface. (b) High-resolution TEM image of the same wire. The inset shows an electron diffraction pattern taken perpendicularly to the nanowire axis.
Room-temperature photoluminescence spectra of In(As)P nanowires detached from the substrate. The dashed line is a guide for the eyes.
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