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Catalyst-free growth of In(As)P nanowires on silicon
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10.1063/1.2336599
/content/aip/journal/apl/89/6/10.1063/1.2336599
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2336599
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Figures

Image of FIG. 1.
FIG. 1.

SEM image of (a) In droplets and (b) InP nanowires at the edge of a Si(111) substrate. The inset shows a close-up image of a droplet and the contact angle. The scale bars correspond to .

Image of FIG. 2.
FIG. 2.

SEM image of (a) a Si(111) surface with in situ deposited In droplets, (b) InP nanowires grown on Si(111) with a V/III ratio of 100, (c) V/III ratio of 200, and (d) V/III ratio of 300. The scale bar corresponds to .

Image of FIG. 3.
FIG. 3.

(a) TEM image of a linear InP nanowire. The inset shows a close-up of the droplet-nanowire interface. (b) High-resolution TEM image of the same wire. The inset shows an electron diffraction pattern taken perpendicularly to the nanowire axis.

Image of FIG. 4.
FIG. 4.

Room-temperature photoluminescence spectra of In(As)P nanowires detached from the substrate. The dashed line is a guide for the eyes.

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/content/aip/journal/apl/89/6/10.1063/1.2336599
2006-08-10
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Catalyst-free growth of In(As)P nanowires on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/6/10.1063/1.2336599
10.1063/1.2336599
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