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Switchable nanometer contacts: Ultrathin Ag nanostructures on Si(100)
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Scheme for fabricating a nanostructure by EBL using PMMA as a nanomask in the center of the structure. The SEM graph shows the structure after removal of the resists. The contrast is caused by the different Ag thicknesses within the nanostructure. For details see text.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Change in resistance of a Ag nanostructure vs time. Electromigration (EM) leads to destruction of the initially continuous wire. The applied constant voltage was . (b) A characteristic STM image of the gap induced by the EM process. (c) Line scan taken along the arrow in (b). The dashed curve represents a worst-case approximation of the tip. (d) -AES done on the two Ag pads close to the gap. The voltage drop of between the pads can be found again by shifting of the Ag peaks.

Image of FIG. 3.
FIG. 3.

(Color online) Reversible switching between an open and a closed state of the gap induced by EM and annealing, respectively. (a) shows (linear) characteristics, indicating either the metallic or tunneling regime. The typical (zero bias) resistances of the two states are in the order of (closed) and (open) as shown for two different samples in (b).

Image of FIG. 4.
FIG. 4.

(Color online) Change of the normalized conductance (left) after evaporation of FDT. The curve (right) shows molecular induced features around 50 and .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Switchable nanometer contacts: Ultrathin Ag nanostructures on Si(100)