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SEM images of PC structure in GaN. The period of the PC structure is around . The insets show the etching depth to be around and the diameter of the air hole to be around , corresponding to the ratio of 0.337.
(a) Experimental setup of microphotoluminescence. (b) Optical pumping spectra of the bulk GaN and GaN PC structure. (c) Optical pumping spectra for different pumping energies. (d) The FWHM and the intensity of the peak of the PC structure for different pumping energies.
Band gap of the PC structure vs the radius-to-period ratio calculated by PWE and the peak positions of the optical pumping spectra. The gray zone represents the spontaneous emission spectral range of GaN bulk.
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