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Carrier lifetime reduction in AlGaAsSb saturable absorbers with air and AlAsSb barriers
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10.1063/1.2240742
/content/aip/journal/apl/89/7/10.1063/1.2240742
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/7/10.1063/1.2240742
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Conduction and valence band near the absorber for three SESAMs: (a) of InP, of AlGaAsSb absorber, and of InP; (b) SESAM (a) without InP cap; (c) of InP, of AlAsSb barrier, and of GaAsSb absorber. I and II denote the type-I and type-II recombinations and “nrr” stands for the nonradiative recombination. The arrows show the allowed transitions.

Image of FIG. 2.
FIG. 2.

Normalized reflectivity change vs time delay between pump and probe pulses for SESAMs [(a)–(c)] (solid lines). The measured reflectivity vs time has been fitted with an exponential decay (dashed lines).

Image of FIG. 3.
FIG. 3.

Photoluminescence spectrum at of with thicknesses of (a) and (b) of . AlGaAsSb is embedded between InP (inset). The type-I and type-II emissions are denoted as I and II.

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/content/aip/journal/apl/89/7/10.1063/1.2240742
2006-08-18
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier lifetime reduction in 1.5μm AlGaAsSb saturable absorbers with air and AlAsSb barriers
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/7/10.1063/1.2240742
10.1063/1.2240742
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