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Conduction and valence band near the absorber for three SESAMs: (a) of InP, of AlGaAsSb absorber, and of InP; (b) SESAM (a) without InP cap; (c) of InP, of AlAsSb barrier, and of GaAsSb absorber. I and II denote the type-I and type-II recombinations and “nrr” stands for the nonradiative recombination. The arrows show the allowed transitions.
Normalized reflectivity change vs time delay between pump and probe pulses for SESAMs [(a)–(c)] (solid lines). The measured reflectivity vs time has been fitted with an exponential decay (dashed lines).
Photoluminescence spectrum at of with thicknesses of (a) and (b) of . AlGaAsSb is embedded between InP (inset). The type-I and type-II emissions are denoted as I and II.
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