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Thermoreflectance maps of a BA laser at (a) and (b) and a heat sink temperature of . (c) The expansion of the data shown in (b), see square, shows the heated active region with rescaled black and white scale. The coordinates used are indicated as well.
(a) Reflectance spectra of GaAs (full line) and (dashed line). (b) First (negative) derivations of the spectra shown in (a) and TR spectrum obtained from the GaAs substrate of the device; see circles. The magnitude of the TR data was scaled to fit the derivative spectrum from the GaAs. Note that the absolute value of the TR signal from GaAs at exceeds the one of by a factor of .
Micro-Raman data monitored at a heat sink temperature of across the front facet (full circles): (a) and (b) . Cuts across the front facet taken from the TR maps shown in Figs. 1 are represented by full lines (vertical cut). These curves are multiplied by a constant factor in order to fit the Raman data within the substrate. Open circles mark the same data, which are obtained from the active region ( , with at the position of the QW), but multiplied by a factor of 3. This factor accounts for the different values in the substrate and epitaxial layer. Zero of the abscissa was set to the center of the active region. The gray area marks the epilayer system with the active region at the center.
Comparison of key parameters of the techniques.
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