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Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
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10.1063/1.2335685
/content/aip/journal/apl/89/7/10.1063/1.2335685
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/7/10.1063/1.2335685
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM micrographs [ and (insets)] of InN layers grown on freestanding GaN; growth temperatures and flux ratios are (a) and 0.9, (b) and 1.4, (c) and 0.9, and (d) and 1.4. The height scale of the inset images is for all samples, but for the larger images it is for (a) and (c) and for (b) and (d).

Image of FIG. 2.
FIG. 2.

Band gap obtained from absorption data and PL spectrum from optimized N-face InN samples.

Image of FIG. 3.
FIG. 3.

Dependence of room-temperature Hall mobility and sheet carrier concentration on layer thickness for InN grown on N-face GaN on C-face 6H–SiC templates. A linear extrapolation of the carrier concentration to zero thickness yields an estimate of for the surface electron density.

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/content/aip/journal/apl/89/7/10.1063/1.2335685
2006-08-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/7/10.1063/1.2335685
10.1063/1.2335685
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