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(Color online) XRD (004) curves recorded from GaNAs films grown with dispersive N and direct N modes. The dash-dot lines are the theoretical simulations.
(Color online) RHEED oscillations and their best fittings during the MBE growth of (a) GaAs and GaInAs at , and (b) GaInAs and GaInNAs at . The insets of (a) and (b) are the RHEED patterns taken from the growth of GaAs and GaInNAs, respectively.
(Color online) SIMS depth profiles of , , and measured from the MQW structures with and without N incorporation; (a) sample A, (b) sample B, and (c) sample C. represents the decay length of extracted from the topmost QW, which is supposed to have the minimum sputtering roughness.
(Color online) XRD (004) curves measured from samples (a) A, (b) B, and (c) C. The thin lines are the theoretical simulations taking into account the In segregation. The insets are the strain profiles, presented in partial, extracted from the segregation model used.
Comparison of N-induced changes of In segregation in ; nominal In contents in RHEED and SIMS (XRD) experiments are about 26% and 35%, respectively.
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