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Suppression of interfacial reaction for on silicon by pre- plasma treatment
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10.1063/1.2337002
/content/aip/journal/apl/89/7/10.1063/1.2337002
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/7/10.1063/1.2337002
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Figures

Image of FIG. 1.
FIG. 1.

SIMS depth profile of the gate dielectrics. The fluorine atoms accumulated mainly at the /silicon substrate interface after plasma pretreatment.

Image of FIG. 2.
FIG. 2.

Hf ESCA spectra of (a) as-deposited sample and (b) plasma treated sample. The inset figures are the fluorine ESCA spectra. A take-off angle (TOA) of 90° was used to measure the ESCA spectra.

Image of FIG. 3.
FIG. 3.

characteristics for the samples with and without plasma pretreatment for various thin film thicknesses. The inset figures are the TEM images for the as-deposited and plasma pretreated samples.

Image of FIG. 4.
FIG. 4.

FTIR spectra of the Si wafers with and without the plasma treatment. Whereas the as-deposited sample showed a characteristic native oxide band at , the plasma treated sample did not. The latter sample had a broader weaker oxide feature at indicating whatever material was present was more amorphous and with lower surface coverage than in the as-deposited sample.

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/content/aip/journal/apl/89/7/10.1063/1.2337002
2006-08-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of interfacial reaction for HfO2 on silicon by pre-CF4 plasma treatment
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/7/10.1063/1.2337002
10.1063/1.2337002
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