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SESAM structure with the absorption recovery time controlled via lattice mismatch engineering.
TEM  bright field image of SESAM 1 from the lattice reformation layer, GaAs buffer, and QWs.
Time resolved reflectivity response of SESAMs 1 and 2. Inset: recovery time for a typical “slow” SESAM structure without InGaP lattice reformation layer.
SESAM 2 reflectivity as a function of the incident pulse energy fluence.
Intensity autocorrelation traces of mode-locked pulses. Inset: corresponding optical spectrum.
Variation of the absorption recovery time with variation of annealing time.
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