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Depth dependence of induced vacancies calculated using TRIM software for the N ions implanted into GaAs by implantation energy and dose of and , respectively, and calculated transmission of wavelength vs depth in GaAs.
Terahertz output power spectrum for a traveling-wave photomixer with surface interdigitated MSM contacts of spacing fabricated on nitrogen implanted GaAs and LT GaAs (focus length of full width at half maximum at input wavelength of , input power of , and bias voltage of ).
Output power at vs bias voltage for a traveling-wave photomixer on nitrogen implanted GaAs and LT GaAs. Optical input .
Output power at vs input power for a traveling-wave photomixer on nitrogen implanted GaAs and LT GaAs. Bias .
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