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Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs
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10.1063/1.2337523
/content/aip/journal/apl/89/7/10.1063/1.2337523
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/7/10.1063/1.2337523
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Depth dependence of induced vacancies calculated using TRIM software for the N ions implanted into GaAs by implantation energy and dose of and , respectively, and calculated transmission of wavelength vs depth in GaAs.

Image of FIG. 2.
FIG. 2.

Terahertz output power spectrum for a traveling-wave photomixer with surface interdigitated MSM contacts of spacing fabricated on nitrogen implanted GaAs and LT GaAs (focus length of full width at half maximum at input wavelength of , input power of , and bias voltage of ).

Image of FIG. 3.
FIG. 3.

Output power at vs bias voltage for a traveling-wave photomixer on nitrogen implanted GaAs and LT GaAs. Optical input .

Image of FIG. 4.
FIG. 4.

Output power at vs input power for a traveling-wave photomixer on nitrogen implanted GaAs and LT GaAs. Bias .

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/content/aip/journal/apl/89/7/10.1063/1.2337523
2006-08-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Traveling-wave photomixers fabricated on high energy nitrogen-ion-implanted GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/7/10.1063/1.2337523
10.1063/1.2337523
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