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(a) SEM image of Pd NC distribution on . (b) Cross-sectional -contrast high-resolution TEM image showing the stacked structure of .
(Color online) hysteresis loops of the memory capacitors with ATB by changing the sweep range from . The data of the device with no Pd NCs are also presented in the range of for comparison.
P∕E characteristics of the capacitors with ATB for two different P∕E voltage levels ( and ).
Energy band profiles of the capacitor with ATB during write operation and retention state.
Endurance and retention characteristics of the capacitor with ATB at room temperature. The retention data are extrapolated to ten years for each level. For these measurements, pulses of (, ) and (, ) were applied to the gate electrode for P∕E operations, respectively.
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