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Pd-nanocrystal-based nonvolatile memory structures with asymmetric tunnel barrier
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10.1063/1.2335677
/content/aip/journal/apl/89/8/10.1063/1.2335677
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/8/10.1063/1.2335677
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of Pd NC distribution on . (b) Cross-sectional -contrast high-resolution TEM image showing the stacked structure of .

Image of FIG. 2.
FIG. 2.

(Color online) hysteresis loops of the memory capacitors with ATB by changing the sweep range from . The data of the device with no Pd NCs are also presented in the range of for comparison.

Image of FIG. 3.
FIG. 3.

P∕E characteristics of the capacitors with ATB for two different P∕E voltage levels ( and ).

Image of FIG. 4.
FIG. 4.

Energy band profiles of the capacitor with ATB during write operation and retention state.

Image of FIG. 5.
FIG. 5.

Endurance and retention characteristics of the capacitor with ATB at room temperature. The retention data are extrapolated to ten years for each level. For these measurements, pulses of (, ) and (, ) were applied to the gate electrode for P∕E operations, respectively.

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/content/aip/journal/apl/89/8/10.1063/1.2335677
2006-08-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pd-nanocrystal-based nonvolatile memory structures with asymmetric SiO2∕HfO2 tunnel barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/8/10.1063/1.2335677
10.1063/1.2335677
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