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Dopant activation in subamorphized silicon upon laser annealing
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10.1063/1.2335950
/content/aip/journal/apl/89/8/10.1063/1.2335950
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/8/10.1063/1.2335950
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) SIMS profiles of boron in the and the SAI-Si samples subjected to a single-pulse LA at 0.50 and at . Boron profile of the PAI-Si sample, created by a preimplantation at with a dose of , subjected to LA at is also included. (b) SIMS profiles of boron in the and the SAI-Si samples subjected to a multiple-pulse LA in nonmelt regime at .

Image of FIG. 2.
FIG. 2.

(Color online) (a) Sheet resistance as a function of laser fluence with an inset showing sheet resistance as a function of laser pulses at a fluence of . (b) Hall dopant activation and sheet resistance as a function of laser pulses at a fluence of .

Image of FIG. 3.
FIG. 3.

(Color online) Junction leakage characteristics of junctions in (a) and (b) SAI-Si samples subjected to single-pulse LA at and multiple-pulse LA at .

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/content/aip/journal/apl/89/8/10.1063/1.2335950
2006-08-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dopant activation in subamorphized silicon upon laser annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/8/10.1063/1.2335950
10.1063/1.2335950
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