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High power gain-switched laser diode using a superfast GaAs avalanche transistor for pumping
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View: Figures


Image of FIG. 1.
FIG. 1.

Spectrum of the material gain used in the simulations for laser diode CVD 90.

Image of FIG. 2.
FIG. 2.

(a) Simulated temporal profiles of the carrier density in the active (QW) region. [(b)–(e)] Different pumping currents and corresponding measured and simulated optical responses from laser diode CVD 90 (Laser Diode Inc., stripe of width , length , and threshold current ).

Image of FIG. 3.
FIG. 3.

Example of measured and simulated time-resolved spectra corresponding to the optical responses shown in Fig. 2(c). Ten levels with equidistant spacing from zero to the peak optical power are used in the presentation of the time-resolved spectra in (a) and (b).

Image of FIG. 4.
FIG. 4.

Schematic presentation of the carrier profiles across the optical confinement layer (OCL) of the laser diode structure at the current peak (a) and within the trailing edge of the current pulse (b). Time-resolved spectra measured at the corresponding instants are shown in (a) and (b), respectively. Ten logarithmically spaced levels between the peak optical power density and 0.04 of the peak value are presented in the spectra. The short-wavelength stimulated emission in (a) is attributed to lasing caused by carriers accumulating in the OCL. The numbers 2 and 3 on the time-resolved spectra correspond to the current and optical pulses shown in Figs. 2(c) and 2(d).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High power gain-switched laser diode using a superfast GaAs avalanche transistor for pumping