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Output properties of field-effect transistor device with Eu source/drain electrodes
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10.1063/1.2337990
/content/aip/journal/apl/89/8/10.1063/1.2337990
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/8/10.1063/1.2337990
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Molecular structure of and device structure of thin-film FET. (b) Energy diagram of metals and LUMO and HOMO of .

Image of FIG. 2.
FIG. 2.

(a) plots and (b) plot for FET device with Eu electrodes measured at just after annealing the device. (c) plots and (d) plot for FET devices with Eu electrodes measured at after keeping the device at for .

Image of FIG. 3.
FIG. 3.

(a) Circuit model for the FET device. plots for FET devices with (b) Cu and (c) Pt electrodes measured at .

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/content/aip/journal/apl/89/8/10.1063/1.2337990
2006-08-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Output properties of C60 field-effect transistor device with Eu source/drain electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/8/10.1063/1.2337990
10.1063/1.2337990
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