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Thermal stability of Schottky contact on InAlAs layer
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10.1063/1.2338567
/content/aip/journal/apl/89/8/10.1063/1.2338567
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/8/10.1063/1.2338567

Figures

Image of FIG. 1.
FIG. 1.

(a) characteristics of the Schottky diodes with various annealing temperatures; (b) barrier height vs annealing temperature for the diodes with two different surface pretreatments.

Image of FIG. 2.
FIG. 2.

Auger depth profiles of the on InAlAs (a) as deposited, (b) after annealing at , and (c) after annealing at .

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM micrographs of the on InAlAs (a) after annealing and (b) after annealing.

Image of FIG. 4.
FIG. 4.

XRD results of on InAlAs with various annealing temperatures.

Image of FIG. 5.
FIG. 5.

EDX of the Ti layer of the structure after annealing at (c) and (d) .

Tables

Generic image for table
Table I.

Barrier heights and ideality factors of the Schottky contact under various annealing temperatures.

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/content/aip/journal/apl/89/8/10.1063/1.2338567
2006-08-24
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal stability of Ti∕Pt∕Cu Schottky contact on InAlAs layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/8/10.1063/1.2338567
10.1063/1.2338567
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