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(a) characteristics of the Schottky diodes with various annealing temperatures; (b) barrier height vs annealing temperature for the diodes with two different surface pretreatments.
Auger depth profiles of the on InAlAs (a) as deposited, (b) after annealing at , and (c) after annealing at .
Cross-sectional TEM micrographs of the on InAlAs (a) after annealing and (b) after annealing.
XRD results of on InAlAs with various annealing temperatures.
EDX of the Ti layer of the structure after annealing at (c) and (d) .
Barrier heights and ideality factors of the Schottky contact under various annealing temperatures.
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