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Greatly improved performance of light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer
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10.1063/1.2338784
/content/aip/journal/apl/89/8/10.1063/1.2338784
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/8/10.1063/1.2338784
/content/aip/journal/apl/89/8/10.1063/1.2338784
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/content/aip/journal/apl/89/8/10.1063/1.2338784
2006-08-25
2014-07-14
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/8/10.1063/1.2338784
10.1063/1.2338784
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