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Self-assembled InAs quantum wire lasers on (001)InP at
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10.1063/1.2335775
/content/aip/journal/apl/89/9/10.1063/1.2335775
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/9/10.1063/1.2335775
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) size atomic force microscopy (AFM) image and (b) AFM profile of uncapped quantum wire (QWR) grown on top of a short period superlattice. QWR are oriented along the [1–10] direction and have height and pitch period.

Image of FIG. 2.
FIG. 2.

Laser characteristics (optical output vs injection current). The inset shows the lasing spectrum from a long and wide laser diode, with three stacked layers of quantum wires in the active region.

Image of FIG. 3.
FIG. 3.

Electroluminiscence spectra of three stacked layers of QWR laser, with cavity length for injection currents of 35, 90, 200, 390, 540, 640, 820, 960, and at . Above lasing emission is observed at .

Image of FIG. 4.
FIG. 4.

Threshold current density vs of two laser devices containing a single layer and three stacked layers of quantum wires in the active region. Laser devices with cavity lengths of 1, 2, and are shown.

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/content/aip/journal/apl/89/9/10.1063/1.2335775
2006-09-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-assembled InAs quantum wire lasers on (001)InP at 1.6μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/9/10.1063/1.2335775
10.1063/1.2335775
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