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Wave forms and spectra of terahertz radiated field from excited at wavelengths of 1560, 1050, and . The wave forms and spectra of 1560 and are shifted.
Power dependences of terahertz amplitudes from InSb, InAs, and InGaAs surfaces excited by femtosecond pulses of 1560, 1050, and .
Electron temperature dependences of peak photocurrent in InSb, InAs, and InGaAs excited by femtosecond pulses of 1560, 1050, and .
Direct and indirect band gap energies of terahertz emitters. , , and are transition energies to , , and valleys, respectively.
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