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Excitation wavelength dependence of terahertz emission from semiconductor surface
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10.1063/1.2338430
/content/aip/journal/apl/89/9/10.1063/1.2338430
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/9/10.1063/1.2338430

Figures

Image of FIG. 1.
FIG. 1.

Wave forms and spectra of terahertz radiated field from excited at wavelengths of 1560, 1050, and . The wave forms and spectra of 1560 and are shifted.

Image of FIG. 2.
FIG. 2.

Power dependences of terahertz amplitudes from InSb, InAs, and InGaAs surfaces excited by femtosecond pulses of 1560, 1050, and .

Image of FIG. 3.
FIG. 3.

Electron temperature dependences of peak photocurrent in InSb, InAs, and InGaAs excited by femtosecond pulses of 1560, 1050, and .

Tables

Generic image for table
Table I.

Direct and indirect band gap energies of terahertz emitters. , , and are transition energies to , , and valleys, respectively.

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/content/aip/journal/apl/89/9/10.1063/1.2338430
2006-08-30
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excitation wavelength dependence of terahertz emission from semiconductor surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/89/9/10.1063/1.2338430
10.1063/1.2338430
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