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High differential resistance type-II superlattice photodiodes for the long-wavelength infrared
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic diagram of the grown epimaterials. Detector mesas are isolated by etching to the GaSb buffer layer and electrical contact is made via the top contact and the backside contact, through the conductive substrate.

Image of FIG. 2.
FIG. 2.

Modeled current components for SL-C, including diffusion, generation recombination, and trap assisted tunneling currents are shown. A very good fit to the experimental data was observed. At an applied reverse bias from 0 up to , minority carrier diffusion current was the dominant current component for this device structure.

Image of FIG. 3.
FIG. 3.

(Color online) Open circles represent the experimental values of for devices with varying active region widths. We see a reasonably good fit with ratio of to for the case of and , respectively, as a function of the hole diffusion length normalized active region width, shown by the solid line. The inset compares the reverse bias current voltage behavior of SL-A ( ‘nid’ region) to SL-C ( nid region) where a decrease in the current density is observed from approximately reverse bias.

Image of FIG. 4.
FIG. 4.

(Color online) Quantum efficiency vs ‘nid’ region thickness for SL-A through SL-D. The QE offset is likely due to photocurrent contributions from regions other than the nid region presented in this simple model.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High differential resistance type-II InAs∕GaSb superlattice photodiodes for the long-wavelength infrared