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ultraviolet/infrared dual-band detector
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of HEIWIP structure. The emitter (top contact) and the bottom contact are doped to with Si as the -type dopant, while the barrier is not intentionally doped. (b) The band diagram showing the conduction/valence band profile of the structure and the transitions leading to UV and IR responses.

Image of FIG. 2.
FIG. 2.

Dark current of the detector at 80 and . The higher dark current of the detector compared to other detectors operating in similar regions is possibly ascribed to hopping conductivity of Si impurity electrons in the barrier.

Image of FIG. 3.
FIG. 3.

(a) UV/IR dual-band response of the detector. The IR response is visible at , while the UV response can be obtained even above . (b) The response at which is due to the transition between and impurity levels of Si in GaN.

Image of FIG. 4.
FIG. 4.

Calculated UV/IR responses (dashed line) of the detector, fitted with experimental results (solid line). The IR response consists of a free carrier response, which matches with the calculated response, and an impurity-related response.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaN∕AlGaN ultraviolet/infrared dual-band detector