Full text loading...
(a) Schematic diagram of HEIWIP structure. The emitter (top contact) and the bottom contact are doped to with Si as the -type dopant, while the barrier is not intentionally doped. (b) The band diagram showing the conduction/valence band profile of the structure and the transitions leading to UV and IR responses.
Dark current of the detector at 80 and . The higher dark current of the detector compared to other detectors operating in similar regions is possibly ascribed to hopping conductivity of Si impurity electrons in the barrier.
(a) UV/IR dual-band response of the detector. The IR response is visible at , while the UV response can be obtained even above . (b) The response at which is due to the transition between and impurity levels of Si in GaN.
Calculated UV/IR responses (dashed line) of the detector, fitted with experimental results (solid line). The IR response consists of a free carrier response, which matches with the calculated response, and an impurity-related response.
Article metrics loading...