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ON THE ROLE OF SODIUM AND HYDROGEN IN THE Si–SiO2 SYSTEM
1.S. R. Hofstein and G. E. Warfield, Solid State Electron. 8, 321 (1965).
2.E. N. Nicollian and A. Goetzberger, IEEE Trans. ED‐12, 108 (1965).
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11.In this model it is assumed that the silicon sites are bonded only to oxygen ions, i.e., the structures are assumed to occur in the oxide film. In a more extensive model (E. Kooi, Philips Res. Repts., to be published) the possibility is considered that at the interface one or more of these oxygen sites should be replaced by silicon. It is in fact not possible from the present experimental information to distinguish between positive oxide charges and donor type interface states close to or above the conduction band minimum.
12.M. V. Whelan, Philips Res. Repts. 30, 562 (1965).
13.E. Kooi, Philips Res. Repts. 20, 578 (1965).
14.E. Kooi, IEEE Trans. ED‐13, 238 (1966).
15.P. Balk, Paper given at the Spring Meeting of the Electrochem. Soc., San Francisco, 1965. Electronics Division. Abst. 109.
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