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High capacitance density metal-insulator-metal structure based on nanolaminate stacks
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10.1063/1.2425030
/content/aip/journal/apl/90/1/10.1063/1.2425030
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/1/10.1063/1.2425030
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) High frequency capacitance density vs applied voltage. (b) Capacitance density at zero bias vs frequency for MIM capacitors with as deposited and annealed nanolaminate stacks (curves 1 and 3) and HfTiO (curves 2 and 4) films. Curves 1 and 2—as deposited. Curves 3 and 4—annealed in for at .

Image of FIG. 2.
FIG. 2.

(a) Current density-voltage characteristics of annealed MIM capacitors with nanolaminate stacks and HfTiO films measured at . (b) Measurement at of current density-voltage characteristic of MIM structure with nanolaminate stacks. The structures were annealed in for at .

Image of FIG. 3.
FIG. 3.

Measured at and calculated (solid lines) normalized capacitance of and HfTiO MIM capacitors (annealed in for at ) as a function of applied voltage.

Image of FIG. 4.
FIG. 4.

(a) High frequency capacitance characteristics of nanolaminate stacks based on MIM capacitor measured at different temperatures. (b) Capacitance density at zero bias vs temperature of nanolaminate stacks and HfTiO films based on annealed MIM capacitors. Structures were annealed at in for .

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/content/aip/journal/apl/90/1/10.1063/1.2425030
2007-01-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High capacitance density metal-insulator-metal structure based on Al2O3–HfTiO nanolaminate stacks
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/1/10.1063/1.2425030
10.1063/1.2425030
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