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One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) STM image of the vicinal Si(111) template covered with of Ge deposited at followed by annealing at the same temperature for (, , , and ). The step edges before the deposition had the configuration and were terminated at the dimers of the structure (Ref. 21). Ge nanoclusters, some of which are indicated by arrows, are aligned along the upper edges of the steps. On the terraces fewer smaller protrusions are seen. The whole area is .

Image of FIG. 2.
FIG. 2.

(Color online) Magnified STM images of the Ge nanoclusters at the upper step edges, clarifying the underlying step structure. Bias voltages are (a) and (b) . The growth conditions are the same as used for Fig. 1 apart from the deposition rate and the postdeposition annealing duration . Open and solid triangles indicate the step position before and after the growth, respectively, and delimit the wide nanowire that forms on the surface prior to the nucleation of the Ge nanoclusters. Both image areas are .

Image of FIG. 3.
FIG. 3.

Room temperature STS spectra of the Ge nanoclusters at the upper step edge (solid line) and on the terraces (dashed line) along with a spectrum of the clean structure on the same terrace (dotted line). The growth condition of Ge is as follows: , , and .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: One-dimensional ordering of Ge nanoclusters along atomically straight steps of Si(111)