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Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy
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10.1063/1.2429955
/content/aip/journal/apl/90/1/10.1063/1.2429955
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/1/10.1063/1.2429955
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

60° tilted-view SEM image showing rod-shaped InP nanowires.

Image of FIG. 2.
FIG. 2.

Top-view SEM image of InP nanowires showing sidewall facets.

Image of FIG. 3.
FIG. 3.

Nanowire height as a function of Au nanoparticle diameter.

Image of FIG. 4.
FIG. 4.

TEM images showing development of stacking faults in progressively longer nanowires. (a) Short wire with no visible faults. [(b) and (c)] Longer wires with faults isolated near the wire tip. The scale bar of each image is .

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/content/aip/journal/apl/90/1/10.1063/1.2429955
2007-01-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Onset of stacking faults in InP nanowires grown by gas source molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/1/10.1063/1.2429955
10.1063/1.2429955
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