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Scheme of the structure of (a) GaN wafers, (b) GaAs wafers, (c) a bonded on , and (d) heterojunction fabricated by wafer bonding.
Room temperature current-voltage measurement of heterojunction fabricated by wafer bonding.
Current-voltage characteristic at different test temperatures of heterojunction in logarithmic scales. The symbol lines in shapes of square , circle , up triangle , down triangle , and diamond are experimental results. Fitting plots with corresponding test temperature to the experiment data are in the styles of solid, dash, dot, dash dot, and dash dot dot lines. The inset picture shows the details of high voltage region.
Extrapolation of the fitting data in Fig. 3. At the critical voltage , the currents are temperature independent.
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