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Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
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10.1063/1.2711276
/content/aip/journal/apl/90/10/10.1063/1.2711276
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/10/10.1063/1.2711276
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM images (view along [110] trench direction) showing the redirection of threading dislocations under the influence of faceting (a) dislocation redirection in a trench of wide (the linear white contrast features correspond to the inserted SiGe growth marker layers); the inset shows the overview of the Ge film grown in the trench (the film was overgrown beyond the sidewall). (b) Dislocation redirection in a trench of wide (the linear white contrast features correspond to the inserted SiGe growth marker layers).

Image of FIG. 2.
FIG. 2.

Schematic showing the crystallography of mismatch relaxation related glissile threading dislocations and their projections onto the (110) plane ( is the width of the trench, while is the height of the sidewall).

Image of FIG. 3.
FIG. 3.

Model for aspect ratio calculation: is the width of the trench, is the inclination angle of the non-{100} facet, is the distance from the trench bottom to the point at which the non-{100} facets fully consume the (001) facet, and is the height that it takes for a dislocation bent at the critical point to be trapped by the sidewall.

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/content/aip/journal/apl/90/10/10.1063/1.2711276
2007-03-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of the defect elimination mechanisms in aspect ratio trapping Ge growth
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/10/10.1063/1.2711276
10.1063/1.2711276
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