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Hemispherical semi-insulating GaAs double-frequency absorption photodetector operating at wavelength
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10.1063/1.2711760
/content/aip/journal/apl/90/10/10.1063/1.2711760
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/10/10.1063/1.2711760
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Configuration of the hemispherical SI-GaAS photodetector. Deep shadows represent metal contacts. (a) Three-dimensional diagram of the detector. (b) The (001) plane for the bottom of the detector. (c) The profile drawing of the detector.

Image of FIG. 2.
FIG. 2.

Schematic diagram of experimental system. cwl, continuous wave laser; A, optical attenuator; PBS, polarized beam splitter; P, half-wave plate for ; L, objective lens; S, SI-GaAs hemisphere; G, current meter; V, voltage meter; , protective resistance; D, Ge detector; and , power meter.

Image of FIG. 3.
FIG. 3.

Photocurrent against incident power. Bias maintained at for both the hemisphere and the block.

Image of FIG. 4.
FIG. 4.

Photocurrent vs azimuth of fundamental optical field. Device biased at , half-wave plate angle incremented in 15° steps and with attenuation of incident power.

Image of FIG. 5.
FIG. 5.

Photocurrent with deduction of dark current vs bias voltage.

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/content/aip/journal/apl/90/10/10.1063/1.2711760
2007-03-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hemispherical semi-insulating GaAs double-frequency absorption photodetector operating at 1.3μm wavelength
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/10/10.1063/1.2711760
10.1063/1.2711760
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