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Configuration of the hemispherical SI-GaAS photodetector. Deep shadows represent metal contacts. (a) Three-dimensional diagram of the detector. (b) The (001) plane for the bottom of the detector. (c) The profile drawing of the detector.
Schematic diagram of experimental system. cwl, continuous wave laser; A, optical attenuator; PBS, polarized beam splitter; P, half-wave plate for ; L, objective lens; S, SI-GaAs hemisphere; G, current meter; V, voltage meter; , protective resistance; D, Ge detector; and , power meter.
Photocurrent against incident power. Bias maintained at for both the hemisphere and the block.
Photocurrent vs azimuth of fundamental optical field. Device biased at , half-wave plate angle incremented in 15° steps and with attenuation of incident power.
Photocurrent with deduction of dark current vs bias voltage.
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