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High temperature stability of lanthanum silicate dielectric on Si (001)
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10.1063/1.2712805
/content/aip/journal/apl/90/10/10.1063/1.2712805
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/10/10.1063/1.2712805
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Back side SIMS profiles of , , and in gate stack before and after a , anneal, showing no diffusion of La into the Si substrate.

Image of FIG. 2.
FIG. 2.

HRTEM of gate stacks before (a) and after (b) a , anneal, showing amorphous phase stability of the thin film.

Image of FIG. 3.
FIG. 3.

Capacitance density as a function of gate voltage for a MIS device after a , anneal, yielding an EOT of . Measured at .

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/content/aip/journal/apl/90/10/10.1063/1.2712805
2007-03-09
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High temperature stability of lanthanum silicate dielectric on Si (001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/10/10.1063/1.2712805
10.1063/1.2712805
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