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(Color online) (a) NRA H profiling of ions ( ion dose) implanted into before and after annealing. A TRIM calculation of the H distribution is shown. Inset: a micrograph of a CIS film bonded to Pyrex. (b) RBS/channeling data of the same samples. The curves indicate lattice disruption for various conditions (random orientation, virgin, as-implanted, for , and for ).
(Color online) (a) AFM image of the undercut side of a thin film after H-ion implantation and thermal exfoliation, (b) the undercut side of a thin film after He-ion implantation and thermal exfoliation, (c) AFM image of a thin film after a polish.
Measured mean and rms roughness (in nm) for STO.
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