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Comparison of the room-temperature current-voltage characteristics across interfaces positioned at different distances from the surface. The current transport demonstrates a varistor behavior in the case of the epitaxially thickened (110) layer and a rectifying behavior for the as-bonded -thick (110) transfer layer. The Ohmic behavior of the Au contacts has been confirmed by the contacts deposited directly onto the (100) surface.
Proposed energy-band diagram of a direct solid bonded interface positioned near to the surface.
Temperature dependence of the reverse bias characteristics of a epitaxially thickened (110) layer, with (a) the current across the interface and (b) the interface capacitance. The insert illustrates how the complete depletion of the (110) layer under forward bias produces a fixed net capacitance.
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