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Current transport characteristics across shallow hybrid-orientation silicon bonded interfaces
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10.1063/1.2712802
/content/aip/journal/apl/90/11/10.1063/1.2712802
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2712802
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Comparison of the room-temperature current-voltage characteristics across interfaces positioned at different distances from the surface. The current transport demonstrates a varistor behavior in the case of the epitaxially thickened (110) layer and a rectifying behavior for the as-bonded -thick (110) transfer layer. The Ohmic behavior of the Au contacts has been confirmed by the contacts deposited directly onto the (100) surface.

Image of FIG. 2.
FIG. 2.

Proposed energy-band diagram of a direct solid bonded interface positioned near to the surface.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the reverse bias characteristics of a epitaxially thickened (110) layer, with (a) the current across the interface and (b) the interface capacitance. The insert illustrates how the complete depletion of the (110) layer under forward bias produces a fixed net capacitance.

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/content/aip/journal/apl/90/11/10.1063/1.2712802
2007-03-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Current transport characteristics across shallow hybrid-orientation silicon bonded interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2712802
10.1063/1.2712802
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