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Electrical properties of oxide heteroepitaxial junctions:
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10.1063/1.2712803
/content/aip/journal/apl/90/11/10.1063/1.2712803
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2712803
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Typical characteristics for LSFO/Nb:STO junctions (a) without and (b) with hysteresis. The inset of (a) is a schematic of the sample indicating the signs of the voltage applied to the electrodes. Arrows in (b) indicate sweeping directions.

Image of FIG. 2.
FIG. 2.

(Color online) Typical characteristics measured at a frequency of for LSFO/Nb:STO junctions without hysteretic behaviors in characteristics. Dashed lines are linear fit for low bias region (between 0 and ) to extract built-in potential .

Image of FIG. 3.
FIG. 3.

(Color online) Hole doping dependence of (a) ideality factor and (b) built-in potential for LSFO/Nb:STO junctions with (open black circles) and without (closed red circles) hysteresis. Dashed lines are guides to the eyes for the respective junctions. The inset in (b) schematically shows evolution of the electronic band structure of LSFO with increasing hole concentration . Red and hatched parts represent the occupied and localized states, respectively.

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/content/aip/journal/apl/90/11/10.1063/1.2712803
2007-03-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of oxide heteroepitaxial p-n junctions: La1−xSrxFeO3∕SrTi0.99Nb0.01O3
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2712803
10.1063/1.2712803
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