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Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots
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10.1063/1.2712804
/content/aip/journal/apl/90/11/10.1063/1.2712804
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2712804
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Atomic force microscope images of (a) bare InGaN QDs grown on a GaN layer and (b) a GaN surface after capping.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM image of a multiple InGaN QD/GaN layer.

Image of FIG. 3.
FIG. 3.

(a) Excitation power dependent PL spectra of a multiple InGaN QD/GaN structure at . (b) Temperature-dependent PL spectra of a multiple InGaN QD/GaN structure.

Image of FIG. 4.
FIG. 4.

(a) Electroluminescence spectra of a multiple InGaN QD/GaN UV LED with increasing input current at room temperature. The inset shows schematic structure of a multiple InGaN QD/GaN UV LED. (b) Variation in EL peak position and EL peak FWHM with increasing input current.

Image of FIG. 5.
FIG. 5.

Room temperature optical output power of a multiple InGaN QD/GaN UV LED. The inset shows current-voltage characteristics of an InGaN QD/GaN UV LED.

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/content/aip/journal/apl/90/11/10.1063/1.2712804
2007-03-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2712804
10.1063/1.2712804
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