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(Color online) Atomic force microscope images of (a) bare InGaN QDs grown on a GaN layer and (b) a GaN surface after capping.
Cross-sectional TEM image of a multiple InGaN QD/GaN layer.
(a) Excitation power dependent PL spectra of a multiple InGaN QD/GaN structure at . (b) Temperature-dependent PL spectra of a multiple InGaN QD/GaN structure.
(a) Electroluminescence spectra of a multiple InGaN QD/GaN UV LED with increasing input current at room temperature. The inset shows schematic structure of a multiple InGaN QD/GaN UV LED. (b) Variation in EL peak position and EL peak FWHM with increasing input current.
Room temperature optical output power of a multiple InGaN QD/GaN UV LED. The inset shows current-voltage characteristics of an InGaN QD/GaN UV LED.
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