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Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures
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10.1063/1.2712809
/content/aip/journal/apl/90/11/10.1063/1.2712809
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2712809
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Effective magnetic barriers for holes with spins aligned (up) and antialigned (down) to the average magnetization. (b) Modulation function for the potential barrier extracted from the curve of the magnetization vs temperature. Solid line is after Ref. 6 and dots are after Ref. 7.

Image of FIG. 2.
FIG. 2.

MDMH: (a) charge density distribution, (b) normalized conductivities and spin polarization, (c) spin-polarized and total resistivities, and (d) spin-dependent and total mobilities. Total quantities are indicated by full lines and spin-dependent quantities by dashed lines with arrows indicating parallel (↑) or antiparallel (↓) polarization.

Image of FIG. 3.
FIG. 3.

For , as in Fig. 2, using a logarithmic scale for the resistivity.

Image of FIG. 4.
FIG. 4.

Same as Fig. 3 for .

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/content/aip/journal/apl/90/11/10.1063/1.2712809
2007-03-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2712809
10.1063/1.2712809
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