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Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled quantum dots emitting at
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10.1063/1.2713135
/content/aip/journal/apl/90/11/10.1063/1.2713135
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2713135
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) PL spectra from as-grown and annealed samples, obtained at under a low excitation power of .

Image of FIG. 2.
FIG. 2.

(Color online) Peak energy, integrated intensity, and FWHM of the peaks in Fig. 1 plotted as a function of annealing temperature. Solid squares indicate the data for the samples with the GaAs proximity capping while solid circles stand for the samples with the capping.

Image of FIG. 3.
FIG. 3.

(Color online) FWHM dependence of the peaks in Fig. 1 on the peak energy.

Image of FIG. 4.
FIG. 4.

(Color online) Excitation-dependent spectra from the samples annealed at 650 and , respectively.

Image of FIG. 5.
FIG. 5.

(Color online) Peak-energy dependence of the peaks from the QDs, WL, and bulk GaAs on annealing temperature, obtained at under the excitation power of .

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/content/aip/journal/apl/90/11/10.1063/1.2713135
2007-03-16
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs∕GaAs quantum dots emitting at 1.3μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2713135
10.1063/1.2713135
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