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Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
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10.1063/1.2713177
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    Affiliations:
    1 Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan 300, Republic of China
    2 Department of Physics and Institute of Electro-Optical Engineering, Center for Nonoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-hai Road, Kaohsiung, Taiwan 804, Republic of China
    3 Department of Photonics, National Chiao Tung University, Hsin-Chu, Taiwan 300, Republic of China and Display Institute, National Chiao Tung University, Hsin-Chu, Taiwan 300, Republic of China
    4 Department of Physics, National Sun Yat-Sen University, Taiwan 804, Republic of China, and Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Taiwan 804, Republic of China
    5 Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan 300, Republic of China
    a) Electronic mail: tcchang@mail.phys.nsysu.edu.tw
    Appl. Phys. Lett. 90, 112108 (2007); http://dx.doi.org/10.1063/1.2713177
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/content/aip/journal/apl/90/11/10.1063/1.2713177
2007-03-14
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of stacked Ni silicide nanocrystals for nonvolatile memory application
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2713177
10.1063/1.2713177
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