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Strain field in silicon on insulator lines using high resolution x-ray diffraction
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10.1063/1.2713335
/content/aip/journal/apl/90/11/10.1063/1.2713335
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2713335
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross section showing the structure and the strain field component. (b) Magnification and scale are adjusted for the SOI crystal; is parallel to the [001] direction and is parallel to [100].

Image of FIG. 2.
FIG. 2.

(Color online) 004 reciprocal space map ( of intensities) from SOI lines. (a) Calculated: only the shape is taken into account. (b) Experimental: resolution is . (c) Calculated: shape and displacement field determined using finite element calculations are considered. and , where and , and are, respectively, the angle of the incident beam with respect to the average (001) plane and the detection angle.

Image of FIG. 3.
FIG. 3.

(Color online) Comparison between the (a) experimental and (b) calculated reciprocal maps (logarithmic scales) in the case of the 206 reflection.

Image of FIG. 4.
FIG. 4.

(Color online) Modification of the calculated 004 reciprocal space map after removal of on both sides of the SOI line.

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/content/aip/journal/apl/90/11/10.1063/1.2713335
2007-03-16
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain field in silicon on insulator lines using high resolution x-ray diffraction
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2713335
10.1063/1.2713335
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