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(a) Cyclic voltammograms recorded using electrolyte solution in the potential range between 0 and at a scan rate of for different numbers of scans. Hydrogen-terminated Si was used as a working electrode. Inset shows the CVs using TBAP solution. (b) Variation of current at as a function of the number of CV scans. Inset shows coverage (%) of the OTS monolayer on H-terminated Si as a function of the number of CV scans.
Schematic showing two-step electrografting process of OTS (R represents the group) monolayer on Si via formation of Si–Si bonds.
(a) Current-voltage characteristics for and structures. (Note a reduction in current density by four orders in magnitude by OTS monolayer.) The bias was applied on Al electrode, while Si was grounded. (b) Nyquist plot of structure recorded in the frequency range of with a bias of . The solid line is a fit to data using a model equivalent to the circuit shown in the inset (see text).
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