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Simultaneous filling of InAs quantum dot states from the GaAs barrier under nonresonant excitation
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10.1063/1.2713347
/content/aip/journal/apl/90/11/10.1063/1.2713347
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2713347
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

cw-PL spectra measured at various crystal temperatures. The inset shows the temperature dependence of the full width at half maximum for the ground state emission .

Image of FIG. 2.
FIG. 2.

Normalized ground state PL transient vs time at various temperatures. The inset displays the temperature dependence of the decay time. The continuous line represents the best fit obtained by the Arrhenius plot.

Image of FIG. 3.
FIG. 3.

Time resolved photoluminescence for the first excited state as a function of the excitation power density at . The inset shows the power dependence of the weights of the fast and slow components.

Image of FIG. 4.
FIG. 4.

Topmost plot: whole PL spectrum of the sample obtained at room temperature and with the maximum power intensity . Lower plot: time resolved PL measurements at different detection energies. The dotted line is a guide for eyes.

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/content/aip/journal/apl/90/11/10.1063/1.2713347
2007-03-13
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simultaneous filling of InAs quantum dot states from the GaAs barrier under nonresonant excitation
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2713347
10.1063/1.2713347
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